Density of states in the presence of spin-dependent scattering in SF bilayers: a numerical and analytical approach

• Tairzhan Karabassov,
• Valeriia D. Pashkovskaia,
• Nikita A. Parkhomenko,
• Anastasia V. Guravova,
• Elena A. Kazakova,
• Boris G. Lvov,
• Alexander A. Golubov and
• Andrey S. Vasenko

Beilstein J. Nanotechnol. 2022, 13, 1418–1431, doi:10.3762/bjnano.13.117

• patterns on the surface of a 3D topological insulator (TI) [18]. The Josephson critical current demonstrates damped oscillatory behavior as a function of the thickness of the ferromagnetic layer in SFS Josephson junctions [19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39

Topographic signatures and manipulations of Fe atoms, CO molecules and NaCl islands on superconducting Pb(111)

• Carl Drechsel,
• Philipp D’Astolfo,
• Jung-Ching Liu,
• Thilo Glatzel,
• Rémy Pawlak and
• Ernst Meyer

Beilstein J. Nanotechnol. 2022, 13, 1–9, doi:10.3762/bjnano.13.1

• realization of MZMs in two dimensions has been also observed in vortex cores on a proximitized topological insulator surface [19][20], in iron-based superconductors [7][21][22] or hybrid van der Waals heterostructures [23]. The fingerprint for MZMs in conductance measurements through the nanowire or in

Reconstruction of a 2D layer of KBr on Ir(111) and electromechanical alteration by graphene

• Zhao Liu,
• Antoine Hinaut,
• Stefan Peeters,
• Sebastian Scherb,
• Ernst Meyer,
• Maria Clelia Righi and
• Thilo Glatzel

Beilstein J. Nanotechnol. 2021, 12, 432–439, doi:10.3762/bjnano.12.35

• topological insulator Bi2Se3 can be used, for example, for the fabrication of 2D layered heterostructures with graphene. Thus, systems can be created to study the unusual interaction of Dirac fermions, opening up new possibilities for novel electronic and spintronic devices [5]. Another famous 2D insulator is

Solid-state Stern–Gerlach spin splitter for magnetic field sensing, spintronics, and quantum computing

• Kristofer Björnson and
• Annica M. Black-Schaffer

Beilstein J. Nanotechnol. 2018, 9, 1558–1563, doi:10.3762/bjnano.9.147

• edge of a two-dimensional topological insulator can be used to construct a solid-state Stern–Gerlach spin splitter. By threading such a Stern–Gerlach apparatus with a magnetic flux, Aharanov–Bohm-like interference effects are introduced. Using ferromagnetic leads, the setup can be used to both measure

• sensitivity, or switching field, b, is related to the characteristic size of the device, r, through b = h/(2πqr2), with q being the unit of electric charge. Keywords: Aharanov–Bohm; quantum computing; spintronics; Stern–Gerlach; SU(2); topological insulator; Introduction Two famous examples of the

• through the magnetic flux [2]. A topological insulator is a material with insulating bulk, but with topologically protected helical edge states. Here we show that it is possible to construct a solid state SG apparatus, or spin splitter, using the edge states in a two-dimensional topological insulator (2D

Robust topological phase in proximitized core–shell nanowires coupled to multiple superconductors

• Tudor D. Stanescu,
• Anna Sitek and
• Andrei Manolescu

Beilstein J. Nanotechnol. 2018, 9, 1512–1526, doi:10.3762/bjnano.9.142

• superconductors. A non-zero phase difference was shown to stabilize the topological phase in a Josephson junction across a 2D electron gas with Rashba spin-orbit coupling and in-plane magnetic field [42] and in a topological insulator nanoribbon coupled with two superconductors [43]. Here, for concreteness, we

Predicting the strain-mediated topological phase transition in 3D cubic ThTaN₃

• Chunmei Zhang and
• Aijun Du

Beilstein J. Nanotechnol. 2018, 9, 1399–1404, doi:10.3762/bjnano.9.132

• %. Interestingly, the effect of spin–orbital coupling (SOC) is significant, leading to a band gap reduction of 0.26 eV in the ThTaN3 compound. Moreover, the strong SOC can turn ThTaN3 into a topological insulator with a large inverted gap up to 0.25 eV, which can be primarily attributed to the inversion between

• the d-orbital of the heavy element Ta and the p-orbital of N. Our results highlight a new 3D topological insulator with strain-mediated topological transition for potential applications in future spintronics. Keywords: Dirac cone; strain; ThTaN3; topological insulator; Introduction The ThTaN3

• ], the experimental realization of TIs is very limited. Therefore, the search for experimentally synthesized large band gap TIs is of paramount importance for their practical application. Theoretically, the transition from the trival insulator to the topological insulator can be achieved by increasing

Disorder-induced suppression of the zero-bias conductance peak splitting in topological superconducting nanowires

• Jun-Tong Ren,
• Hai-Feng Lü,
• Sha-Sha Ke,
• Yong Guo and
• Huai-Wu Zhang

Beilstein J. Nanotechnol. 2018, 9, 1358–1369, doi:10.3762/bjnano.9.128

• -matter systems, including p-wave superconductors [10][11], topological insulator-superconductor hybrid structures [12][13], artificially engineered Kitaev chains [14][15], semiconductor-superconductor hybrid nanowire systems [16][17][18][19][20][21]. Very recently, the one-dimensional Majorana mode

Inverse proximity effect in semiconductor Majorana nanowires

• Alexander A. Kopasov,
• Ivan M. Khaymovich and
• Alexander S. Mel'nikov

Beilstein J. Nanotechnol. 2018, 9, 1184–1193, doi:10.3762/bjnano.9.109

• topological insulator regime as the magnetic field should well exceed Γw to avoid the suppression of the critical temperature due to the van Hove singularities (see Figure 2a,c for small Γs values). As soon as Γw becomes comparable with αp with the typical quasiparticle momentum this regime completely

Thermoelectric current in topological insulator nanowires with impurities

• Sigurdur I. Erlingsson,
• Jens H. Bardarson and
• Andrei Manolescu

Beilstein J. Nanotechnol. 2018, 9, 1156–1161, doi:10.3762/bjnano.9.107

• charge current generated by maintaining a temperature difference over a nanowire at zero voltage bias. For topological insulator nanowires in a perpendicular magnetic field the current can change sign as the temperature of one end is increased. Here we study how this thermoelectric current sign reversal

• electronic transport properties and also reduce the phonon scattering which then leads to increased efficiency [1]. Interestingly, often the materials that show the best thermoelectric properties on the nanoscale can also exhibit topological insulator properties [2], although the connection between the two

• properties is not always straightforward [3]. Even though few experimental studies exist on thermoelectric properties in topological insulator nanowires (TIN), many studies have reported magnetoresistance oscillations, both in longitudinal and transversal fields for TINs [4][5][6][7][8][9][10]. In its

Non-equilibrium electron transport induced by terahertz radiation in the topological and trivial phases of Hg_1−xCd_xTe

• Alexandra V. Galeeva,
• Alexey I. Artamkin,
• Alexey S. Kazakov,
• Sergey N. Danilov,
• Sergey A. Dvoretskiy,
• Nikolay N. Mikhailov,
• Ludmila I. Ryabova and
• Dmitry R. Khokhlov

Beilstein J. Nanotechnol. 2018, 9, 1035–1039, doi:10.3762/bjnano.9.96

• and 2D topological Dirac states coexisting in a smooth topological heterojunction. Keywords: terahertz radiation; topological insulator; photoconductivity; Findings Discovery of theoretically predicted quantum spin Hall effect states in HgTe quantum wells [1][2] has initiated extensive studies of

• topological insulator materials [3][4]. Noteworthy, the ARPES technique, being a well-developed method to probe topological surface states, is a challenge in the case of HgTe-based topological insulators due to its zero-gap energy spectrum in the bulk. Nevertheless, formation of topological surface states in

An implementation of spin–orbit coupling for band structure calculations with Gaussian basis sets: Two-dimensional topological crystals of Sb and Bi

• Sahar Pakdel,
• Mahdi Pourfath and
• J. J. Palacios

Beilstein J. Nanotechnol. 2018, 9, 1015–1023, doi:10.3762/bjnano.9.94

• , we have chosen to apply our implementation to Sb and Bi, which are prototypical topological materials where SOC plays a crucial role. Despite being elemental, they present a broad range of behaviors. While bulk Bi is a trivial semimetal, a Bi(111) monolayer is a 2D topological insulator (TI) [27]. Sb

• decoupling of the TSS requires a minimum of 7 layers [54][55]. In between the semiconductor monolayer and the 7-layered antimonene a crossover occurs, where claims of the existence of a 2D topological insulator have also been reported, but we do not pursue the investigation of this issue here [55]. When TSS

• Figure 6a, one can follow the evolution of the band structure from trivial to nontrivial bands and the ”Mexican hat” shaped valence band in Figure 6b. The band inversion at the Γ point is evident. However, this visual evidence is not sufficient to prove that this system is a topological insulator and a

Revealing the interference effect of Majorana fermions in a topological Josephson junction

• Jie Liu,
• Tiantian Yu and
• Juntao Song

Beilstein J. Nanotechnol. 2018, 9, 520–529, doi:10.3762/bjnano.9.50

• return to the conventional 2π. Thus, to reveal the 4π nature of the MFs, it may be necessary to observe more than just a supercurrent. Interestingly, several groups have studied superconductor-topological insulator–superconductor junctions that also display a 4π Josephson current. However, the behavior

Transport characteristics of a silicene nanoribbon on Ag(110)

• Ryoichi Hiraoka,
• Chun-Liang Lin,
• Kotaro Nakamura,
• Ryo Nagao,
• Maki Kawai,
• Ryuichi Arafune and
• Noriaki Takagi

Beilstein J. Nanotechnol. 2017, 8, 1699–1704, doi:10.3762/bjnano.8.170

• behaves as a 2D topological insulator (TI) as a result of the sizable spin–orbit coupling of Si [14][15][16]. Silicene grown on solid substrates has been studied intensively. Various superstructures such as (4×4), (2√3×2√3)R30° and (√13×√13) R13.9° are formed on Ag(111) [17][18][19][20][21][22]. These

Electron energy relaxation under terahertz excitation in (Cd_1−xZn_x)₃As₂ Dirac semimetals

• Alexandra V. Galeeva,
• Ivan V. Krylov,
• Konstantin A. Drozdov,
• Anatoly F. Knjazev,
• Alexey V. Kochura,
• Alexander P. Kuzmenko,
• Vasily S. Zakhvalinskii,
• Sergey N. Danilov,
• Ludmila I. Ryabova and
• Dmitry R. Khokhlov

Beilstein J. Nanotechnol. 2017, 8, 167–171, doi:10.3762/bjnano.8.17

• -electromagnetic effect; terahertz radiation; topological insulator; Findings The theoretical prediction of the existence of topological insulators [1][2] and their further experimental observation [3][4][5][6][7] have led to the significant growth of scientific interest in this area of research. Topological

• insulators form a class of materials possessing a different electron energy spectrum at the surface as compared to the bulk. The bulk energy spectrum of a topological insulator is typically observed for a semiconductor, whereas spin-polarized gapless electron states with a Dirac linear dispersion relation

• exist on the surface of a topological insulator. Recently, another topological state of matter – a Dirac semimetal – was theoretically predicted [8] and then experimentally observed through the ARPES measurements in Cd3As2 [9][10][11]. In a Dirac semimetal, the bulk conduction and valence bands are